DocumentCode
1965768
Title
Modeling of FET Switches
Author
Kharabi, Faramarz
Author_Institution
RFMD, Greensboro, NC, USA
fYear
2012
fDate
14-17 Oct. 2012
Firstpage
1
Lastpage
4
Abstract
This paper describes the salient features of modeling FET devices for switch applications, with examples in GaAs PHEMT and GaN HEMT technologies. It explains the subtle differences that differentiate these models from PA models and what is required to accurately describe their small- and large- signal behavior. In that respect, suggestions are made on how to approach formulation of critical parameters in meeting unique requirements of modeling high-power switches with novel device structures.
Keywords
III-V semiconductors; field effect transistor switches; gallium arsenide; high electron mobility transistors; wide band gap semiconductors; FET devices modeling; GaAs; GaN; PA models; PHEMT technologies; device structures; high-power switches modeling; large-signal behavior; small-signal behavior; Gallium nitride; Logic gates; Mathematical model; PHEMTs; Semiconductor device measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2012 IEEE
Conference_Location
La Jolla, CA
ISSN
1550-8781
Print_ISBN
978-1-4673-0928-8
Type
conf
DOI
10.1109/CSICS.2012.6340092
Filename
6340092
Link To Document