Title :
The Design and Evaluation of GaAs Power MESFETs
Author :
Angus, John A. ; Butlin, Richard S. ; Parker, Donald ; Bennett, Robert H. ; Turner, James A.
Author_Institution :
Allen Clark Research Centre, The Plessey Company Limited, Caswell, Towcester, Northants. NN12 8EQ
Abstract :
Two power MESFET device structures capable of providing in excess of 1 Watt RF output power in S-band have been fabricated using established small signal MESFET technology. Power added efficiencies of 30%, gains > 8 dB and 1 dB compression powers greater than 1 Watt have been measured. The fabrication and characteristics of these devices will be described and experimental results presented. A beam lead package which makes thermal contact with the top and bottom faces of the MESFET chip will be described as will a technique for the surface thermal profiling of chips using nematic liquid crystals.
Keywords :
Fabrication; Gain measurement; Gallium arsenide; Liquid crystals; MESFETs; Power generation; Power measurement; RF signals; Radio frequency; Semiconductor device measurement;
Conference_Titel :
Microwave Conference, 1975. 5th European
Conference_Location :
Hamburg, Germany
DOI :
10.1109/EUMA.1975.332210
