• DocumentCode
    1965863
  • Title

    Wide Band Linear Voltage-to-Current Converter Design

  • Author

    Lin, Chun Wei ; Lin, Sheng Feng ; Wang, Chi Fu

  • Author_Institution
    Dept. of Electron. Eng., Nat. Yunlin Univ. of Sci. & Technol., Yunlin, Taiwan
  • fYear
    2010
  • fDate
    13-15 Jan. 2010
  • Firstpage
    115
  • Lastpage
    120
  • Abstract
    In this work, we propose a wide band linear voltage-to-current converter (VIC) with mobility degradation compensation. By use of NMOS output stage and grounding NMOS input stage, PSRR enhances as well as body effect decreases. In addition, through utilizing the sum of two current sources operate in linear and saturation region respectively, the nonlinearity of complementary parabolic voltage to current characteristics caused by mobility degradation are reduced. A feedback loop is then inserted to increase bandwidth, so that the proposed VIC is useful in further applications. A practical chip was fabricated by TSMC 0.35 ¿m 3.3 V CMOS process with its measured transconductance (Gm), bandwidth, and operational range are 0.975~1.032, 85.5 MHz, and 1.2 V respectively. The experiment results show that the proposed design significantly improves bandwidth and the nonlinearity effect of VIC originated from mobility degradation.
  • Keywords
    CMOS analogue integrated circuits; convertors; integrated circuit design; NMOS output stage; TSMC CMOS process; complementary parabolic voltage; design; feedback loop; grounding NMOS input stage; mobility degradation compensation; nonlinearity effect; size 0.35 mum; transconductance; voltage 3.3 V; wide band linear voltage-to-current converter design; Bandwidth; CMOS process; Degradation; Feedback loop; Grounding; MOS devices; Semiconductor device measurement; Transconductance; Voltage; Wideband; PSRR; mobility degradation; transconductance; voltage to current converter (VIC);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Design, Test and Application, 2010. DELTA '10. Fifth IEEE International Symposium on
  • Conference_Location
    Ho Chi Minh City
  • Print_ISBN
    978-0-7695-3978-2
  • Electronic_ISBN
    978-1-4244-6026-7
  • Type

    conf

  • DOI
    10.1109/DELTA.2010.24
  • Filename
    5438701