DocumentCode
1965871
Title
Engineering Design of a near Junction Thermal Transport Heat Spreader
Author
Mandrusiak, Gary ; Weaver, Stanton ; Lin, David ; Browne, Eric ; Vetury, Ramakrishna ; Aimi, Marco ; Boomhower, Oliver
Author_Institution
GE Global Res., Gen. Electr. Co., Niskayuna, NY, USA
fYear
2012
fDate
14-17 Oct. 2012
Firstpage
1
Lastpage
12
Abstract
This paper describes a convection-based, self-contained heat spreader that provides device-level thermal management for GaN power amplifiers. The concept connects microchannels etched into the backside of the die to a liquid flow circuit that includes autonomous flow-balancing valves, a diaphragm pump, and a high-performance heat exchanger. The integrated system provides a heat spreading capability that reduces transistor gate heat fluxes by up to four orders of magnitude, enabling device-level temperature control using conventional cold plates. This paper will review the analysis used to design the key components in the assembly and to project their performance as part of an integrated system.
Keywords
III-V semiconductors; design engineering; etching; gallium compounds; microassembling; microchannel flow; power amplifiers; power transistors; temperature control; thermal management (packaging); wide band gap semiconductors; GaN; autonomous flow-balancing valve; cold plate; device-level temperature control; device-level thermal management; diaphragm pump; engineering design; high-performance heat exchanger; liquid flow circuit; microchannel etching; near junction thermal transport heat spreader; power amplifier; transistor gate heat flux reduction; Gallium nitride; Heat transfer; Heating; Logic gates; Microchannel; Power amplifiers; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2012 IEEE
Conference_Location
La Jolla, CA
ISSN
1550-8781
Print_ISBN
978-1-4673-0928-8
Type
conf
DOI
10.1109/CSICS.2012.6340097
Filename
6340097
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