Adaptability of a 280 GHz SiGe BiCMOS Process for High Frequency Commercial Applications

SiGe HBT devices with F_MAX up to 500 GHz have been reported in the past few years [1], suggesting the realization of practical circuits into the THz regime. While the bulk of commercial applications will operate at much lower frequencies, the high level of RF performance realized by these devices can be leveraged to enable better circuit designs at these lower frequencies. In this paper several aspects of this optimization will be discussed including operation at both low and high V_CC, low I_C, and high temperatures. Finally a fully integrated varactor suitable for mm-Wave frequency synthesis will be discussed.