Theory of impact ionization in thin multiplication layers

Author

Hayat, Majeed M. ; Kwon, Oh-Hyun ; Saleh, Mohammad A.

Author_Institution

Dept. of Electr. & Comput. Eng., New Mexico Univ., Albuquerque, NM, USA

Volume

2

fYear

2001

fDate

2001

Firstpage

695

Abstract

We use a model for the ionization coefficients to calculate the frequency response characteristics and the avalanche breakdown voltage in thin layers. Notably, calculations based on the dead-space theory for the APD time response reveal that in addition to a reduction in the excess noise factor, thin layers benefit from reduced spectral fluctuations in the buildup-time limited photocurrent

Keywords

avalanche photodiodes; frequency response; impact ionisation; semiconductor device breakdown; semiconductor device models; APD time response; avalanche breakdown voltage; buildup-time limited photocurrent; dead space; excess noise factor; frequency response characteristics; gain-bandwidth product; impact ionization coefficients; power spectral density; reduced spectral fluctuations; thin multiplication layers; Bandwidth; Fluctuations; Frequency response; Gain measurement; Impact ionization; Noise reduction; Photoconductivity; Predictive models; Space exploration; Time factors;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE

Conference_Location

San Diego, CA

ISSN

1092-8081

Print_ISBN

0-7803-7105-4

Type

conf

DOI

10.1109/LEOS.2001.969004

Filename

969004