Title :
Growth of GaSb and GalnAsSb epilayers on GaAs substrates by MOCVD
Author :
Guang-yu, Wei ; Rui-wu, Peng
Author_Institution :
Shanghai Institute of Metallurgy, Chinese Academy of Sciences
Keywords :
Crystalline materials; Epitaxial growth; Gallium arsenide; Hall effect; MOCVD; Optical films; Optical scattering; Raman scattering; Substrates; Temperature dependence;
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
DOI :
10.1109/MOVPE.1992.664929
