Title :
Nonvolatile RAM based on magnetic tunnel junction elements
Author :
Durlam, M. ; Naji, P. ; DeHerrera, M. ; Tehrani, S. ; Kerszykowski, G. ; Kyler, K.
Author_Institution :
Phys. Sci. Res. Labs., Motorola Labs., Tempe, AZ, USA
Abstract :
Magnetoresistive random access memory (MRAM), is based on magnetic memory elements integrated with CMOS. Key attributes of MRAM technology are nonvolatility and unlimited read and write endurance. Recent advances in magnetic tunnel junction (MTJ) materials give MRAM the potential for high speed, low operating voltage, and high density.
Keywords :
magnetic film stores; magnetoresistive devices; random-access storage; CMOS; density; magnetic memory elements; magnetic tunnel junction elements; magnetoresistive random access memory; nonvolatile RAM; operating voltage; read endurance; speed; write endurance; Contracts; Magnetic switching; Magnetic tunneling; Magnetoresistance; Memory architecture; Nonvolatile memory; Read-write memory; Solid state circuits; Switching circuits;
Conference_Titel :
Solid-State Circuits Conference, 2000. Digest of Technical Papers. ISSCC. 2000 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-5853-8
DOI :
10.1109/ISSCC.2000.839718
