• DocumentCode
    1966161
  • Title

    Nonvolatile RAM based on magnetic tunnel junction elements

  • Author

    Durlam, M. ; Naji, P. ; DeHerrera, M. ; Tehrani, S. ; Kerszykowski, G. ; Kyler, K.

  • Author_Institution
    Phys. Sci. Res. Labs., Motorola Labs., Tempe, AZ, USA
  • fYear
    2000
  • fDate
    9-9 Feb. 2000
  • Firstpage
    130
  • Lastpage
    131
  • Abstract
    Magnetoresistive random access memory (MRAM), is based on magnetic memory elements integrated with CMOS. Key attributes of MRAM technology are nonvolatility and unlimited read and write endurance. Recent advances in magnetic tunnel junction (MTJ) materials give MRAM the potential for high speed, low operating voltage, and high density.
  • Keywords
    magnetic film stores; magnetoresistive devices; random-access storage; CMOS; density; magnetic memory elements; magnetic tunnel junction elements; magnetoresistive random access memory; nonvolatile RAM; operating voltage; read endurance; speed; write endurance; Contracts; Magnetic switching; Magnetic tunneling; Magnetoresistance; Memory architecture; Nonvolatile memory; Read-write memory; Solid state circuits; Switching circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2000. Digest of Technical Papers. ISSCC. 2000 IEEE International
  • Conference_Location
    San Francisco, CA, USA
  • ISSN
    0193-6530
  • Print_ISBN
    0-7803-5853-8
  • Type

    conf

  • DOI
    10.1109/ISSCC.2000.839718
  • Filename
    839718
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1966161