A High IIP3, 50 GSamples/s Track and Hold Amplifier in 0.25 µm InP HBT Technology

Author

Daneshgar, Saeid ; Griffith, Zach ; Rodwell, Mark J W

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of California at Santa Barbara, Santa Barbara, CA, USA

fYear

2012

fDate

14-17 Oct. 2012

Firstpage

1

Lastpage

4

Abstract

A 50 GSamples/s track and hold amplifier (THA) is designed and fabricated in a 0.25 μm InP HBT technology. High speed switching functionality in the amplifier is achieved using Base-Collector diodes rather than switched-emitter-followers (SEF). Operating with -5 V and -2.5 V supplies, it achieves IIP3 more than +16 dBm up to 22 GHz. An HD3 of -30.3 dB is measured at +7.5 dBm input power which is P1dB point of THA at 15 GHz. Time domain measurement verifies the sampling rate of 50 GSamples/s in the THA.

Keywords

III-V semiconductors; heterojunction bipolar transistors; indium compounds; microwave amplifiers; microwave bipolar transistors; microwave diodes; sample and hold circuits; HBT technology; InP; SEF; THA; base-collector diodes; frequency 15 GHz; high speed switching functionality; size 0.25 mum; switched-emitter-followers; time domain measurement; track and hold amplifier; voltage -2.5 V; voltage -5 V; Frequency measurement; Heterojunction bipolar transistors; Indium phosphide; Linearity; Power measurement; Radio frequency; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium (CSICS), 2012 IEEE

Conference_Location

La Jolla, CA

ISSN

1550-8781

Print_ISBN

978-1-4673-0928-8

Type

conf

DOI

10.1109/CSICS.2012.6340112

Filename

6340112