Title :
A High IIP3, 50 GSamples/s Track and Hold Amplifier in 0.25 µm InP HBT Technology
Author :
Daneshgar, Saeid ; Griffith, Zach ; Rodwell, Mark J W
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California at Santa Barbara, Santa Barbara, CA, USA
Abstract :
A 50 GSamples/s track and hold amplifier (THA) is designed and fabricated in a 0.25 μm InP HBT technology. High speed switching functionality in the amplifier is achieved using Base-Collector diodes rather than switched-emitter-followers (SEF). Operating with -5 V and -2.5 V supplies, it achieves IIP3 more than +16 dBm up to 22 GHz. An HD3 of -30.3 dB is measured at +7.5 dBm input power which is P1dB point of THA at 15 GHz. Time domain measurement verifies the sampling rate of 50 GSamples/s in the THA.
Keywords :
III-V semiconductors; heterojunction bipolar transistors; indium compounds; microwave amplifiers; microwave bipolar transistors; microwave diodes; sample and hold circuits; HBT technology; InP; SEF; THA; base-collector diodes; frequency 15 GHz; high speed switching functionality; size 0.25 mum; switched-emitter-followers; time domain measurement; track and hold amplifier; voltage -2.5 V; voltage -5 V; Frequency measurement; Heterojunction bipolar transistors; Indium phosphide; Linearity; Power measurement; Radio frequency; Switches;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2012 IEEE
Conference_Location :
La Jolla, CA
Print_ISBN :
978-1-4673-0928-8
DOI :
10.1109/CSICS.2012.6340112
