DocumentCode :
1966296
Title :
3-Gbit/s, 16-channel GaAs multiplexer and demultiplexer LSIs
Author :
Naito, H. ; Kawai, M. ; Ohtsuka, T. ; Ishihara, T. ; Yamaguchi, K. ; Taniguchi, A. ; Onodera, H. ; Endo, T.
Author_Institution :
Fujitsu Lab. Ltd., Kawasaki, Japan
fYear :
1989
fDate :
22-25 Oct. 1989
Firstpage :
321
Lastpage :
324
Abstract :
A 16-channel multiplexer and demultiplexer LSI chip set has been designed, fabricated, and tested. A maximum operating speed of 3 Gb/s and a low power consumption of 2.0 W were realized. Using these ICs, the required mounting space was reduced by 1/70 and power consumption to 1/5 that of conventional discrete medium-scale integrated circuits. A high transconductance was obtained by using 1- mu m-long tungsten-silicide gate MESFETs. The transconductance was 270 mS/mm for a threshold voltage of -0.20 V at a gate bias of 0.6 V, and 230 mS/mm for a threshold voltage of -0.70 V at a gate bias of 0 V. A 5-20- mu m logic gate width was adopted to obtain wideband operation and lower power consumption. These optimizations were performed by computer simulation using the modified SPICE model.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; large scale integration; multiplexing equipment; 2.0 W; 3 Gbit/s; GaAs; LSI chip set; MESFETs; SPICE model; WSi/sub x/; demultiplexer; gate bias; logic gate width; mounting space; multiplexer; operating speed; power consumption; threshold voltage; transconductance; wideband operation; Circuit testing; Energy consumption; Gallium arsenide; Large scale integration; Logic gates; MESFETs; Multiplexing; Threshold voltage; Transconductance; Wideband;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual
Conference_Location :
San Diego, CA, USA
Type :
conf
DOI :
10.1109/GAAS.1989.69352
Filename :
69352
Link To Document :
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