High-speed modulation of 850-nm vertical-cavity surface-emitting lasers

Author

Lim, D.H. ; Hwang, S.M. ; Nam, S.H.

Author_Institution

MEMS Lab., Samsung Adv. Inst. of Technol., Suwon, South Korea

Volume

2

fYear

2001

fDate

2001

Firstpage

724

Abstract

The modulation bandwidth characteristics of oxide-confined post-type VCSELs and the effect of parasitic parameters are reported. From the measured and calculated modulation spectra, the intrinsic modulation limits of VCSEL devices are extracted and compared with the trench-type VCSEL fabricated from same wafer. The high-speed modulation bandwidth of 13.4 GHz was obtained from the 850-nm oxide-confined VCSELs

Keywords

equivalent circuits; frequency response; optical modulation; optical transmitters; surface emitting lasers; 13.4 GHz; 850 nm; eye pattern; frequency responses; high-speed modulation bandwidth; intrinsic modulation limits; modulation bandwidth characteristics; oxide-confined post-type VCSEL; oxide-current aperture size; parasitic capacitance; parasitic parameters; pseudorandom modulation signal; small signal modulation response; small-signal equivalent circuit; smoothed modulation responses; trench-type VCSEL; Apertures; Bandwidth; Frequency modulation; Holographic optical components; Optical interconnections; Optical recording; Optical signal processing; Parasitic capacitance; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE

Conference_Location

San Diego, CA

ISSN

1092-8081

Print_ISBN

0-7803-7105-4

Type

conf

DOI

10.1109/LEOS.2001.969019

Filename

969019