A fully-integrated optical duobinary transceiver in a 130nm SOI CMOS technology

Author

Buckwalter, James F. ; Kim, Joohwa ; Zheng, Xuezhe ; Li, Guoliang ; Raj, Kannan ; Krishnamoorthy, Ashok

Author_Institution

Univ. of California-San Diego, La Jolla, CA, USA

fYear

2011

fDate

19-21 Sept. 2011

Firstpage

1

Lastpage

4

Abstract

A 5-Gb/s fully-integrated optical duobinary transceiver front-end is demonstrated in a 130-nm silicon-on-insulator (SOI) CMOS technology. A photonic microring modulator is shown to support 5 Gb/s modulation through the use of duobinary electronic modulation. Duobinary modulation is proposed to mitigate opto-electronic bandwidth limitations for the photonic ring modulator. The circuit illustrates an NRZ data eye of 500 μW amplitude and consumes 115 mW of power for both the analog and digital portions of the transmitter.

Keywords

CMOS integrated circuits; elemental semiconductors; integrated optoelectronics; optical interconnections; optical modulation; optical transceivers; optical transmitters; silicon; silicon-on-insulator; NRZ data eye; SOI CMOS Technology; Si; analog transmitter; digital transmitter; duobinary electronic modulation; fully-integrated optical duobinary transceiver front-end; optical interconnection; optoelectronic bandwidth limitation; photonic microring modulator; photonic ring modulator; power 500 muW; silicon-on-insulator CMOS technology; size 130 nm; High speed optical techniques; Optical modulation; Optical receivers; Optical resonators; Optical transmitters; Photonics;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference (CICC), 2011 IEEE

Conference_Location

San Jose, CA

ISSN

0886-5930

Print_ISBN

978-1-4577-0222-8

Type

conf

DOI

10.1109/CICC.2011.6055403

Filename

6055403