Author :
Ueki, M. ; Akeuchi, K.T. ; Yamamoto, T. ; Tanabe, A. ; Ikarashi, N. ; Saitoh, M. ; Nagumo, T. ; Sunamura, H. ; Narihiro, M. ; Uejima, K. ; Masuzaki, K. ; Furutake, N. ; Saito, S. ; Yabe, Y. ; Mitsuiki, A. ; Takeda, K. ; Hase, T. ; Hayashi, Y.
Abstract :
A low-power 2Mb ReRAM macro was developed in 90 nm CMOS platform, demonstrating lower power data-writing (x1/7) and faster data-reading (x2∼3) as compared to a conventional flash. The memory window at −6σ for 10 years was confirmed with a high-speed 1-bit ECC considering operating temperature ranging from −40 to 85 °C, where the worst conditions are high-temperature (85°C) “Off” writing and low-temperature (−40°C) “On” writing followed by high-temperature (85°C) retention. A pulse-modulated Off-state verify and an interface-control of Ru electrode are effective for suppressing random fluctuation of Roff readout and for sustaining the On-state retention, respectively.
