DocumentCode :
1966658
Title :
Flow Modulation Epitaxy of Nitrogen Doped Zinc Selenide Grown by MOVPE
Author :
Taskar, Nikhil ; Khan, Babar ; Dorman, Donald
Author_Institution :
Philips Laboratories, NY
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
54
Lastpage :
54
Keywords :
Doping; Epitaxial growth; Epitaxial layers; Excitons; Inductors; Nitrogen; Pulse modulation; Substrates; Temperature; Zinc compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.664932
Filename :
664932
Link To Document :
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