Title :
Fabrication of 50-100 nm patterned InGaN blue light emitting heterostructures
Author :
Lu, Chao ; Yin, Aijun ; Im, J.-S. ; Nurmikko, A.V. ; Xu, J.M. ; Han, J.
Author_Institution :
Div. of Eng., Brown Univ., Providence, RI, USA
Abstract :
Laterally ordered, patterned subwavelength sized nitride structures are of interest for novel blue/ultraviolet light emitters as spontaneous and stimulated emission may be enhanced in these artificial structures. In this work we present an approach to produce such small period of structure by electron beam lithography and pattern transfer from synthesizing self-organized porous alumina. The light emitting capability of such subwavelength scale structure with arrays of isolated MQW posts has been studied
Keywords :
III-V semiconductors; electron beam lithography; gallium compounds; indium compounds; nanotechnology; optical fabrication; photoluminescence; photonic band gap; semiconductor epitaxial layers; semiconductor quantum wells; spontaneous emission; sputter etching; stimulated emission; time resolved spectra; wide band gap semiconductors; 50 to 100 nm; InGaN; artificial structures; blue light emitting heterostructures; electron beam lithography; fabrication; isolated MQW posts; laterally ordered; light emitting capability; light emitting nanoscale structure; pattern transfer; patterned subwavelength sized structures; photonic bandgap; photonic crystal defect cavity structure; reactive ion etching; self-assembled templates; self-organized porous alumina; spontaneous emission; stimulated emission; surface recombination; time resolved photoluminescence; time-resolved lifetime; two-dimensional photonic crystal effect; Electron beams; Etching; Fabrication; Gallium nitride; Lattices; Nanostructures; Optical arrays; Photoluminescence; Quantum well devices; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-7105-4
DOI :
10.1109/LEOS.2001.969037
