Title :
Microstructure fabrication of GaN and Si substrates using intense femtosecond laser
Author :
Ozono, Kame ; Obara, Minoru
Author_Institution :
Dept. of Electron. & Electr. Eng., Keio Univ., Yokohama, Japan
Abstract :
We report on the demonstration of non-thermal, high-speed microstructure fabrication of GaN and Si substrates using high-intensity femtosecond laser at 800 nm and at repetition rate of 1 kpps. We focus on the etching characteristic of wide-band gap GaN and low-band gap Si
Keywords :
III-V semiconductors; elemental semiconductors; gallium compounds; laser ablation; laser beam etching; micromachining; silicon; wide band gap semiconductors; 800 nm; GaN; SEM; Si; ablation depth; high etch rate; high-intensity laser; high-speed fabrication; intense femtosecond laser; laser ablation etching; microstructure fabrication; stripe structures; Absorption; Etching; Gallium nitride; Laser ablation; Microstructure; Optical device fabrication; Optical films; Optical pulse generation; Surface emitting lasers; Ultrafast optics;
Conference_Titel :
Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-7105-4
DOI :
10.1109/LEOS.2001.969039
