DocumentCode
1966818
Title
A 79 GHz dynamic frequency divider in SiGe bipolar technology
Author
Knapp, H. ; Meister, T.F. ; Wurzer, M. ; Zoschg, D. ; Aufinger, K. ; Treitlinger, L.
Author_Institution
Corp. Res., Infineon Technol. AG, Munich, Germany
fYear
2000
fDate
9-9 Feb. 2000
Firstpage
208
Lastpage
209
Abstract
Conventional static frequency dividers use master-slave flipflops to achieve frequency division. They allow broadband operation down to DC as long as the slew rate of the input signal is high enough. Their upper frequency, however, is Limited by the gate delay /spl tau//sub D/ to a value of approximately 1/(2 /spl tau//sub D/). Significantly higher operating frequencies can be achieved by dynamic frequency dividers. The limited bandwidth of dynamic dividers is a drawback but poses no problem in many applications which require divider operation only in a specific frequency range. Dynamic dividers manufactured in III-V-technologies and, recently, in SiGe technology achieve maximum operating frequencies of 60 GHz to 75 GHz. However, most of these circuits operate over relatively narrow bandwidths of less than one octave. This regenerative frequency divider exploits the high-speed potential of SiGe technologies to combine high maximum frequency with operation over wide frequency range.
Keywords
Ge-Si alloys; bipolar integrated circuits; frequency dividers; high-speed integrated circuits; semiconductor materials; 79 GHz; SiGe; SiGe bipolar technology; dynamic frequency divider; high-speed IC; regenerative frequency divider; Bandwidth; Circuits; Cutoff frequency; Feedback loop; Frequency conversion; Frequency response; Germanium silicon alloys; Low pass filters; Manufacturing; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2000. Digest of Technical Papers. ISSCC. 2000 IEEE International
Conference_Location
San Francisco, CA, USA
ISSN
0193-6530
Print_ISBN
0-7803-5853-8
Type
conf
DOI
10.1109/ISSCC.2000.839752
Filename
839752
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