DocumentCode :
1966933
Title :
Nonlinear Effects in Impatt Diode Amplifiers
Author :
li, T. Berce
Author_Institution :
Research Institute for Telecommunication "TKI", 1026 Budapest, Gábor AÃ\x81ron u. 65. Hungary
fYear :
1975
fDate :
1-4 Sept. 1975
Firstpage :
705
Lastpage :
709
Abstract :
The nonlinear effects in Impatt diode amplifiers have been investigated both theoretically and experimentally. Output power, group delay and AM-to-PM conversion characteristics show an increased unsymmetry with enhanced input level. The FM distortion is higher at band center than at the resonant frequency. Below the band center, a maximum is reached at for the AM-to-PM conversion. The output power of an amplifier may be much higher than that of an oscillator with the same diode.
Keywords :
Admittance; Chromium; Diodes; Frequency; High power amplifiers; Oscillators; Power amplifiers; Power generation; Temperature measurement; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1975. 5th European
Conference_Location :
Hamburg, Germany
Type :
conf
DOI :
10.1109/EUMA.1975.332196
Filename :
4130895
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1966933
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