• DocumentCode
    1966933
  • Title

    Nonlinear Effects in Impatt Diode Amplifiers

  • Author

    li, T. Berce

  • Author_Institution
    Research Institute for Telecommunication "TKI", 1026 Budapest, Gábor AÃ\x81ron u. 65. Hungary
  • fYear
    1975
  • fDate
    1-4 Sept. 1975
  • Firstpage
    705
  • Lastpage
    709
  • Abstract
    The nonlinear effects in Impatt diode amplifiers have been investigated both theoretically and experimentally. Output power, group delay and AM-to-PM conversion characteristics show an increased unsymmetry with enhanced input level. The FM distortion is higher at band center than at the resonant frequency. Below the band center, a maximum is reached at for the AM-to-PM conversion. The output power of an amplifier may be much higher than that of an oscillator with the same diode.
  • Keywords
    Admittance; Chromium; Diodes; Frequency; High power amplifiers; Oscillators; Power amplifiers; Power generation; Temperature measurement; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1975. 5th European
  • Conference_Location
    Hamburg, Germany
  • Type

    conf

  • DOI
    10.1109/EUMA.1975.332196
  • Filename
    4130895
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1966933