A New Package for Negative Resistance Microwave Diodes

A new microwave diode package containing additional inductance and capacitance besides case capacitance and lead inductance has been considered. Admittance and small signal characteristics of a silicon IMPATT diode cased in a new package are discussed. Using one of this sort of diodes, small signal power gain in amplifiers are measured and shown electrical characteristics improvement by the adjustement of additional inductance. Under the same amplifier circuit condition, new packaged diode gave 6.5 dB bigger small signal power gain than conventional one. It is advantage to be able to have diode admittance lower by use of new package than conventional one.