DocumentCode
1966951
Title
A New Package for Negative Resistance Microwave Diodes
Author
Ishii, T. ; Kondoh, A. ; Shirahata, K.
Author_Institution
Central Research Labs., Mitsubishi Electric Corp., Mizuhara Itami Hyogo 664, JAPAN
fYear
1975
fDate
1-4 Sept. 1975
Firstpage
710
Lastpage
714
Abstract
A new microwave diode package containing additional inductance and capacitance besides case capacitance and lead inductance has been considered. Admittance and small signal characteristics of a silicon IMPATT diode cased in a new package are discussed. Using one of this sort of diodes, small signal power gain in amplifiers are measured and shown electrical characteristics improvement by the adjustement of additional inductance. Under the same amplifier circuit condition, new packaged diode gave 6.5 dB bigger small signal power gain than conventional one. It is advantage to be able to have diode admittance lower by use of new package than conventional one.
Keywords
Admittance; Capacitance; Diodes; Electric variables measurement; Gain measurement; Inductance measurement; Packaging; Power amplifiers; Power measurement; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1975. 5th European
Conference_Location
Hamburg, Germany
Type
conf
DOI
10.1109/EUMA.1975.332197
Filename
4130896
Link To Document