Title :
Femtosecond interactions in semiconductor quantum dots
Author :
Klimov, Victor I.
Author_Institution :
Chem. Div., Los Alamos Nat. Lab., NM, USA
Abstract :
Colloidal synthesis allows preparation of almost monodisperse semiconductor nanoparticles with sizes from 1 to 10 nm and size dispersions as small as 5%. These nanoparticles are also known as nanocrystals or colloidal quantum dots (QDs). The sub-10-nm size range corresponds to a regime of strong quantum confinement for which electronic energies exhibit a pronounced dependence on particle size. Tunable electronic structures combined with the ease of chemical manipulation, make colloidal QDs ideal building blocks for electronic and optical nanodevices. An important step towards realization of such devices is development of understanding of carrier relaxation processes in QDs and in particular the effect of QD size and surface properties on intra-band energy relaxation, competition between radiative and nonraditive decay channels, and multiparticle dynamics. In the present work, we apply femtosecond photoluminescence and transient absorption spectroscopies to investigate carrier relaxation in strongly-confined CdSe QDs
Keywords :
Auger effect; II-VI semiconductors; cadmium compounds; carrier relaxation time; nonradiative transitions; photoluminescence; semiconductor quantum dots; surface recombination; time resolved spectra; 1 to 10 nm; CdSe; QD size; carrier relaxation processes; colloidal quantum dots; femtosecond photoluminescence; intraband energy relaxation; monodisperse semiconductor nanoparticles; multiparticle dynamics; nonradiative decay channels; phonon bottleneck; quantum-confined Auger recombination; radiative decay channels; semiconductor quantum dots; strong quantum confinement; transient absorption; Absorption; Chemicals; Nanocrystals; Nanoparticles; Photoluminescence; Potential well; Quantum dots; Spectroscopy; Ultrafast electronics; Ultrafast optics;
Conference_Titel :
Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-7105-4
DOI :
10.1109/LEOS.2001.969050