The properties of ion-implanted InGaAs single quantum-well semiconductor saturable absorber mirrors for passive mode-locking

Author

Lederer, M.J. ; Kolev, V. ; Luther-Davies, B.

Author_Institution

Res. Sch. of Phys. Sci. & Eng., Australian Nat. Univ., Canberra, ACT, Australia

Volume

2

fYear

2001

fDate

2001

Firstpage

790

Abstract

We demonstrate an InGaAs single quantum well SESAM for operation around 1060 nm which was manufactured by MOCVD growth and ion-implantation. The results from specular reflectance as well as time resolved and fluence dependent reflectivity measurements are shown. We have used the SESAMs to mode-lock a range of low and medium power lasers at 1040 nm-1064 nm in both picosecond and femtosecond operation depending on the laser crystal, cavity arrangement and SESAM properties. In view of the greatly different gain properties of these laser crystals, ion-implantation has proved a versatile technique for tailoring of the SESAM properties to suit a particular laser material

Keywords

III-V semiconductors; MOCVD; gallium arsenide; indium compounds; ion implantation; laser cavity resonators; laser mirrors; laser mode locking; optical saturable absorption; quantum well devices; reflectivity; semiconductor quantum wells; 1060 nm; InGaAs; MOCVD growth; femtosecond operation; fluence dependent reflectivity; ion-implantation; low-finesse vertical cavity design; passive mode-locking; picosecond response; quantum well intermixing effect; semiconductor saturable absorber mirrors; single quantum well SESAM; specular reflectance; time resolved reflectivity; Crystals; Indium gallium arsenide; Laser mode locking; MOCVD; Manufacturing; Power lasers; Quantum well lasers; Quantum wells; Reflectivity; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE

Conference_Location

San Diego, CA

ISSN

1092-8081

Print_ISBN

0-7803-7105-4

Type

conf

DOI

10.1109/LEOS.2001.969052

Filename

969052