• DocumentCode
    1967003
  • Title

    Non Linear Analysis of Three Terminal Avalanche Devices

  • Author

    Lefebvre, M. ; Salmer, G. ; Crosnier, Y. ; Constant, E.

  • Author_Institution
    Centre Hyperfréquences et Semiconducteurs (E.R.A. au C.N.R.S. N° 454), UNIVERSITE DE LILLE I BP 36 59650 VILLENEUVE D´´ASCQ FRANCE
  • fYear
    1976
  • fDate
    14-17 Sept. 1976
  • Firstpage
    3
  • Lastpage
    7
  • Abstract
    The Influence of a thermionic type injected current on the performances of GaAs IMPATT diodes under large signal conditions is studied. This theoretical approach is developed by using the computer program previously elaborated for high efficiency IMPATT diodes. The parameters used to vary the operating conditions are the r. f. level, injection phase, d.c. current multiplication factor and base collector doping profile. Interesting results can be expected in X band with a transistor-like device in which the transistor effect, avalanche effect and transit time effect are use together.
  • Keywords
    Bipolar transistors; Breakdown voltage; Doping profiles; Gallium arsenide; Microwave amplifiers; Microwave frequencies; Microwave transistors; Neural networks; Pulse amplifiers; Semiconductor diodes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1976. 6th European
  • Conference_Location
    Rome, Italy
  • Type

    conf

  • DOI
    10.1109/EUMA.1976.332235
  • Filename
    4130901
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1967003