Temperature performance of AlGaInAs semiconductor lasers

Author

Brien, D.O. ; McInerney, J.G. ; White, J.K. ; Evans, J. ; SpringThorpe, A.J.

Author_Institution

Dept. of Phys., Univ. Coll. Cork, Ireland

Volume

2

fYear

2001

fDate

2001

Firstpage

806

Abstract

The laser structures investigated in this study are MQW structures that have been processed into ridge waveguide Fabry-Perot devices. We have characterized the AlGaInAs system in term of the transparency current density, effective diffusion length, internal absorption, loss and efficiency, and differential gain

Keywords

III-V semiconductors; aluminium compounds; current density; diffusion; gallium arsenide; indium compounds; molecular beam epitaxial growth; quantum well lasers; ridge waveguides; thermo-optical effects; waveguide lasers; AlGaInAs; AlGaInAs semiconductor lasers; AlGaInAs system; MBE growth; MQW structures; current density; differential gain; digital alloy technique; effective diffusion length; efficiency; internal absorption; laser structures; loss; ridge waveguide Fabry-Perot devices; temperature performance; transparency; Absorption; Manufacturing; Optical materials; Packaging; Quantum well devices; Quantum well lasers; Radiative recombination; Semiconductor lasers; Temperature; Thermoelectricity;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE

Conference_Location

San Diego, CA

ISSN

1092-8081

Print_ISBN

0-7803-7105-4

Type

conf

DOI

10.1109/LEOS.2001.969060

Filename

969060