Latency in short pulse based optical interconnects

Author

Agarwal, Diwakar ; Miller, David A B

Author_Institution

Ginzton Lab., Stanford Univ., CA, USA

Volume

2

fYear

2001

fDate

2001

Firstpage

812

Abstract

We analyze the latency in three optical receiver circuit architectures intended for short optical interconnects. We compare the latency for interconnects using (i) non-return to zero (NRZ) modulation format, and (ii) modulation of short optical pulses ( 1ps). We find that the use of short optical pulses in modulator based interconnects offers the potential of a significant reduction in latency. In this paper we assume that the GaAs p-i-n modulators and diodes are hybrid integrated on 0.25 μm CMOS circuits

Keywords

CMOS integrated circuits; electro-optical modulation; gallium arsenide; high-speed optical techniques; integrated optoelectronics; optical interconnections; optical receivers; p-i-n photodiodes; 0.25 micron; GaAs; GaAs p-i-n diodes; GaAs p-i-n modulators; NRZ modulation format; hybrid integrated; modulator based interconnects; optical receiver circuit architecture latency; short optical pulse interconnect latency; short optical pulses; Delay; Gallium arsenide; Integrated circuit interconnections; Optical interconnections; Optical modulation; Optical pulses; Optical receivers; Optical signal processing; PIN photodiodes; Pulse modulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE

Conference_Location

San Diego, CA

ISSN

1092-8081

Print_ISBN

0-7803-7105-4

Type

conf

DOI

10.1109/LEOS.2001.969063

Filename

969063