• DocumentCode
    1967470
  • Title

    Nearly lasing actions from metal-oxide-semiconductor structure on Si

  • Author

    Lin, Ching-Fuh ; Chung, Peng-Fei ; Chen, Miin-Jang ; Su, Wei-Fang

  • Author_Institution
    Graduate Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • Volume
    2
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    829
  • Abstract
    We discover that SiO2 nanoparticles could significantly improve electroluminescence (EL) at Si bandgap energy from metal-oxide-silicon (MOS) structures for orders of magnitudes. Furthermore, the nanoparticle-modified MOS exhibits nearly lasing actions like the threshold behavior and resonance modes
  • Keywords
    MIS structures; electroluminescence; integrated optics; nanostructured materials; silicon compounds; MOS structures; Si; Si bandgap energy; SiO2; SiO2 nanoparticles; electroluminescence; metal-oxide-semiconductor structure; metal-oxide-silicon structures; nanoparticle-modified MOS; resonance modes; threshold behavior; Carrier confinement; Charge carrier processes; Contacts; Nanoparticles; Nanostructures; Paints; Photonic band gap; Radiative recombination; Resonance; Silver;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE
  • Conference_Location
    San Diego, CA
  • ISSN
    1092-8081
  • Print_ISBN
    0-7803-7105-4
  • Type

    conf

  • DOI
    10.1109/LEOS.2001.969072
  • Filename
    969072
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1967470