Title :
A monolithically integrated bacteriorhodopsin/GaAs MODFET bio-photoreceiver
Author :
Xu, J. ; Bhattacharya, P. ; Varo, G.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
We report the first monolithic integration of selectively deposited bacteriorhodopsin (bR), acting as a photodetector, with a GaAs-based modulation doped field effect transistor (MODFET). The photovoltage developed across the bR is applied across the gate of the FET. In essence, the large photovoltage developed across bR is converted to a photocurrent. We believe these sensors will be extremely useful for imaging arrays and artificial vision applications
Keywords :
HEMT integrated circuits; biomolecular electronics; equivalent circuits; gallium arsenide; high electron mobility transistors; integrated optoelectronics; photoconductivity; photodetectors; photovoltaic effects; proteins; GaAs; artificial vision; bacteriorhodopsin photodetector; bio-photoreceiver; cell membrane; complex photochemical cycle; equivalent circuit; imaging arrays; light-harvesting protein; modulation doped field effect transistor; monolithic integration; photocurrent; photoisomerization; photovoltage; polarization sensitivity; purple membrane sheet; selectively deposited bacteriorhodopsin; Epitaxial layers; FETs; Gallium arsenide; HEMTs; Image sensors; MODFETs; Monolithic integrated circuits; Photoconductivity; Photodetectors; Sensor arrays;
Conference_Titel :
Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-7105-4
DOI :
10.1109/LEOS.2001.969074
