Title :
Silicon lateral trench detectors for optical communications
Author :
Rogers, Dennis L.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
Using a simple model based on a parallel plate approximation it is seen, as expected, that a PIN base receiver can out-perform a lateral trench detector (LTD) analog but that the advantages of monolithic integration can make up for that difference. For bandwidths in excess of 3 GHz the cost advantages of a monolithic silicon technology might still make the LTD the detector of choice in many applications especially for short haul high speed links for computer interconnects
Keywords :
elemental semiconductors; integrated optoelectronics; isolation technology; optical receivers; photodetectors; silicon; CMOS compatible; PIN detectors; Si; deep trenches; fiber optic communication; frequency response; high speed detectors; lateral trench detectors; monolithic integration; parallel plate approximation model; parallel trenches; preamplification circuitry; short haul high speed links; Absorption; Bandwidth; Capacitors; Circuits; Frequency response; High speed optical techniques; Optical detectors; Optical surface waves; Parasitic capacitance; Silicon;
Conference_Titel :
Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-7105-4
DOI :
10.1109/LEOS.2001.969076
