High-efficiency, 10 GHz bandwidth resonant-cavity-enhanced silicon photodetectors operating at 850 nm wavelength

Author

Emsley, Matthew K. ; Dosunmu, Olufemi ; Ünlü, M. Selim

Author_Institution

Dept. of Electr. & Comput. Eng., Boston Univ., MA, USA

Volume

2

fYear

2001

fDate

2001

Firstpage

839

Abstract

We present RCE Si pin photodetectors capable of quantum efficiency of ~40% and bandwidth of ~10 GHz at 850 nm with a buried distributed Bragg reflector fabricated by means of a double-SOI technique. The reflecting wafers are commercially reproducible and have single crystalline silicon device layers for fabricating silicon RCE photodiodes with high bandwidth efficiencies as well as low dark current. These wafers are well suited for VLSI integration and are compatible with standard CMOS processing making them ideal for monolithic integration of receiver circuits with photodetectors

Keywords

frequency response; integrated optoelectronics; optical receivers; p-i-n photodiodes; photodetectors; silicon-on-insulator; 10 GHz; 850 nm; CMOS compatible; RIE; Si; Smart-Cut technique; VLSI integration; buried distributed Bragg reflector; double-SOI technique; epitaxial device layer; frequency response; high-efficiency photodetectors; low-pressure chemical vapor deposition; monolithic integration; pin photodetectors; receiver circuits; resonant-cavity-enhanced photodetectors; responsivity; spectral quantum efficiency; Bandwidth; CMOS process; Crystallization; Dark current; Distributed Bragg reflectors; Photodetectors; Photodiodes; Resonance; Silicon devices; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE

Conference_Location

San Diego, CA

ISSN

1092-8081

Print_ISBN

0-7803-7105-4

Type

conf

DOI

10.1109/LEOS.2001.969077

Filename

969077