Raman spectroscopy of Mg-doped gallium nitride: shift of the A/sub 1/(LO) phonon

Author

Burton, J.C. ; Cohen, S. ; Lukacs, S.J. ; Long, F.H. ; Liang, S. ; Lu, Y. ; Li, Y. ; Tran, C.

Author_Institution

Rutgers Univ., Piscataway, NJ, USA

fYear

1997

fDate

11-13 Aug. 1997

Firstpage

56

Lastpage

57

Abstract

For the development of improved devices, the control and understanding of the electrical properties of nitride semiconductors is essential. Although significant progress has been made in recent years, the p-type doping of nitride semiconductors has proven to be challenging. It has been found necessary to anneal the sample after growth at moderate (700/spl deg/C-900/spl deg/C) temperatures in order to electrically activate the dopants. In order to help in the development of improved p-type doped GaN and other group III-nitrides, we have undertaken a study of the Raman spectroscopy of p-type doped GaN under a variety of processing conditions.

Keywords

III-V semiconductors; Raman spectra; annealing; gallium compounds; magnesium; phonons; semiconductor doping; A/sub 1/(LO) phonon; GaN:Mg; Raman spectroscopy; annealing; electrical activation; nitride semiconductor; p-type doping; Annealing; Frequency; Gallium nitride; III-V semiconductor materials; Laser theory; Phonons; Photonic band gap; Physics; Spectroscopy; Tail;

fLanguage

English

Publisher

ieee

Conference_Titel

Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi

Conference_Location

Montreal, Que., Canada

Print_ISBN

0-7803-3891-X

Type

conf

DOI

10.1109/LEOSST.1997.619261

Filename

619261