Silicon double-island single-electron device

Author

Fujiwara, A. ; Takahashi, Y. ; Yamazaki, K. ; Namatsu, H. ; Nagase, M. ; Kurihara, K. ; Murase, K.

Author_Institution

NTT Basic Res. Labs., Kanagawa, Japan

fYear

1997

fDate

10-10 Dec. 1997

Firstpage

163

Lastpage

166

Abstract

A three-current-terminal single-electron device including two capacitively-coupled Si islands and gates that can control each island was fabricated on a Si-on-insulator wafer. Each island was embedded in one branch of a T-shaped Si wire. Current switching between the two branches was performed at 30 K by using the gate voltage to control the Coulomb blockade at each island. A correlation between these two currents was also found, which opens up the possibility of one-by-one transfer of electrons in this device.

Keywords

SIMOX; cryogenic electronics; elemental semiconductors; equivalent circuits; logic gates; quantum interference devices; semiconductor quantum wires; semiconductor switches; silicon; 30 K; Coulomb blockade control; SOI wafer; Si; Si-on-insulator wafer; T-shaped Si wire; capacitively-coupled Si islands; current switching; double layer gate structure; double-island single-electron device; gate voltage; three-current-terminal device; Atomic force microscopy; Atomic measurements; Binary decision diagrams; Circuits; Force measurement; Oxidation; Silicon; Single electron devices; Switches; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-4100-7

Type

conf

DOI

10.1109/IEDM.1997.650293

Filename

650293