Title :
New buried heterostructure using MOVPE selective regrowth of semi-insulating (SI-) InAlAs for low capacitance optical sources
Author :
Bouchoule, S. ; Decobert, J. ; Grosmaire, S. ; Leclerc, D. ; Kazmierski, C.
Author_Institution :
Lab. for Photonics & Nanostuctures, CNRS, Bagneux, France
Abstract :
A new buried heterostructure (BH) is proposed for high-speed optical sources, based on selective regrowth of semi-insulating (SI-) InAlAs around an active mesa stripe. The performances of a first BH laser structure realised using SI-InAlAs were compared to that of standard InP:p/InP:n BH lasers. A reduction of the structure under both forward and reverse bias is obtained, with no degradation of the optical properties of the source
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; indium compounds; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; BH laser; InAlAs; MOVPE selective regrowth; active mesa stripe; active optical devices; blocking layers; buried heterostructure; diffusion profile; forward bias; high resistivity; high-speed optical sources; low capacitance optical sources; reverse bias; semi-insulating layer; Capacitance measurement; Conductivity; Degradation; Diodes; Epitaxial growth; Epitaxial layers; High speed optical techniques; Indium compounds; Optical modulation; Robustness;
Conference_Titel :
Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-7105-4
DOI :
10.1109/LEOS.2001.969099
