Ultra-wide dynamic range 1.75 dB noise-figure, 900 MHz CMOS LNA

Author

Gramegna, G. ; Magazzu, A. ; Sclafani, C. ; Paparo, M.

Author_Institution

STMicroelectron., Catania, Italy

fYear

2000

fDate

9-9 Feb. 2000

Firstpage

380

Lastpage

381

Abstract

Efforts toward single-chip transceivers for wireless communications motivate integration of the low-noise amplifier (LNA) in CMOS technology. However, LNA design for CDMA and W-CDMA/UMTS transceivers operating from 860 to 2150 MHz typically requires input IP3/spl ges/0 dBm and noise figure NF/spl les/1.8. A wide-dynamic-range 900 MHz CMOS LNA uses the CMOS part of an RF dedicated BiCMOS process with 0.35 /spl mu/m minimum channel length. The process features on-chip inductors with Q>8-10, nMOS f/sub T/>26 GHz and nMOS transistors separated from the substrate.

Keywords

CMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; code division multiple access; integrated circuit noise; transceivers; 0.35 micron; 1.75 dB; 860 to 2150 MHz; 900 MHz; CDMA; CMOS LNA; CMOS technology; IP3; W-CDMA/UMTS; dedicated BiCMOS process; low-noise amplifier; minimum channel length; noise figure; on-chip inductors; single-chip transceivers; transceivers; ultra-wide dynamic range; wireless communications; 3G mobile communication; CMOS process; CMOS technology; Dynamic range; Low-noise amplifiers; Multiaccess communication; Noise figure; Radio frequency; Transceivers; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2000. Digest of Technical Papers. ISSCC. 2000 IEEE International

Conference_Location

San Francisco, CA, USA

ISSN

0193-6530

Print_ISBN

0-7803-5853-8

Type

conf

DOI

10.1109/ISSCC.2000.839824

Filename

839824