A 900 MHz SOI fully-integrated RF power amplifier for wireless transceivers

Author

Kumar, M. ; Yue Tan ; Johnny Sin ; Longxing Shi ; Jack Lau

Author_Institution

Hong Kong Univ. of Sci. & Technol., Kowloon, Hong Kong

fYear

2000

fDate

9-9 Feb. 2000

Firstpage

382

Lastpage

383

Abstract

This 900 MHz fully-integrated power amplifier (IPA) for the first time uses SOI lateral double-diffused MOS transistors (LDMOSTs) and high-Q on-chip inductors. The IPA uses a 1.5 /spl mu/m LDMOS (0.35 /spl mu/m channel length 3.85 /spl mu/m drift length 4.5 GHz f/sub T/, 20 V breakdown) technology, which is compatible with CMOS and BJT for baseband and receiver functions. This makes it suitable for single-chip transceiver application. The IPA delivers +23 dBm output power with 16 dB gain and 49% power added efficiency (PAE) at 900 MHz, and is suitable for mobile phone handset application.

Keywords

MOS analogue integrated circuits; UHF power amplifiers; mobile radio; silicon-on-insulator; telephone sets; transceivers; 1.5 micron; 16 dB; 49 percent; 900 MHz; SOI fully-integrated RF power amplifier; lateral double-diffused MOS transistor; mobile phone handset; on-chip inductor; single-chip wireless transceiver; Baseband; CMOS technology; Electric breakdown; High power amplifiers; Inductors; MOSFETs; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Transceivers;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2000. Digest of Technical Papers. ISSCC. 2000 IEEE International

Conference_Location

San Francisco, CA, USA

ISSN

0193-6530

Print_ISBN

0-7803-5853-8

Type

conf

DOI

10.1109/ISSCC.2000.839825

Filename

839825