DocumentCode
1968687
Title
Two Dimensional Analysis of the GaAs Double Hetero Stripe-Geometry Laser
Author
Rozzi, T. ; Itoh, T.
Author_Institution
Philips Research Laboratories, Eindhoven, The Netherlands
fYear
1976
fDate
14-17 Sept. 1976
Firstpage
495
Lastpage
498
Abstract
The GaAlAs/GaAs stripe-geometry laser is analyzed using a new technique called the effective dielectric constant (EDC) method. Unlike previously reported techniques, use of the EDC method allows both vertical and sideward directions in the cross section of the laser to be taken into account in analyzing the field confinement mechanism. Computed data on field concentration and cutoff behavior are presented.
Keywords
Attenuation; Dielectric constant; Eigenvalues and eigenfunctions; Electrodes; Gallium arsenide; High-K gate dielectrics; Laser beam cutting; Optical waveguides; Refractive index; Slabs;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1976. 6th European
Conference_Location
Rome, Italy
Type
conf
DOI
10.1109/EUMA.1976.332324
Filename
4130990
Link To Document