Title :
Intermodulation distortion characterisation and analysis of the InGaP/GaAs DHBT
Author :
Khan, A. ; Dharmasiri, C.N. ; Rezazadeh, A.A.
Author_Institution :
Dept. of Electr. Eng. & Electron., Univ. of Manchester Inst. of Sci. & Technol., UK
Abstract :
The two-tone intermodulation distortion (IMD) characteristic behaviour of microwave InGaP/GaAs double heterojunction bipolar transistors (DHBTs) is studied. This is carried out through measurement, with the results being compared to a simple analytical technique. Both mid frequency (50 MHz) and high frequency (2 GHz) ranges are characterised and the results compared. In addition, the effect of varying input bias levels on the non-linearities has been studied.
Keywords :
III-V semiconductors; UHF bipolar transistors; gallium compounds; heterojunction bipolar transistors; indium compounds; intermodulation distortion; microwave bipolar transistors; 2 GHz; 50 MHz; DHBT nonlinearities; IMD; InGaP-GaAs; double heterojunction bipolar transistors; input bias levels; microwave transistors; two-tone intermodulation distortion; Capacitance; Diodes; Electrical resistance measurement; Electromagnetics; Frequency; Gallium arsenide; Intermodulation distortion; Microwave technology; Scattering parameters; Voltage;
Conference_Titel :
High Frequency Postgraduate Student Colloquium, 2004
Print_ISBN :
0-7803-8426-1
DOI :
10.1109/HFPSC.2004.1360384
