DocumentCode :
1968784
Title :
Implementing RF signal limiter with heterojunction devices
Author :
Seng, Hing Weng ; Sloan, Robin ; Williams, Keith
Author_Institution :
Dept. of Electron. & Electr. Eng., UMIST, Manchester, UK
fYear :
2004
fDate :
6-7 Sept. 2004
Firstpage :
195
Lastpage :
198
Abstract :
Microwave limiters are used to prevent burnout and permanent damage in power sensitive components such as receivers and mixers. State-of-the-art limiters are implemented employing PIN diodes, in which limiting is provided by varying the RF resistance of the diode. The PIN diode is a cheap and easy-to-use devices but its bandwidth and power rating is limited. Furthermore, PIN diodes cannot readily be fabricated. in MMIC technology. Here, an investigation is presented on the feasibility of employing heterojunction devices in limiters. This paper presents a T-switch attenuator formed by HEMTs simulated at X-band.
Keywords :
HEMT integrated circuits; attenuators; field effect MMIC; microwave limiters; 10 GHz; HEMT; MMIC technology; PIN diodes; RF signal limiter; T-switch attenuator; heterojunction devices; microwave limiters; mixers; power sensitive components; receivers; Circuits; Diodes; HEMTs; Heterojunctions; MMICs; MODFETs; Microwave devices; RF signals; Radio frequency; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
High Frequency Postgraduate Student Colloquium, 2004
Print_ISBN :
0-7803-8426-1
Type :
conf
DOI :
10.1109/HFPSC.2004.1360387
Filename :
1360387
Link To Document :
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