• DocumentCode
    1968785
  • Title

    Millimeter Impatt Amplifier Optimization for Telecommunication Systems

  • Author

    Doumbia, I. ; De Jaeger, J.C. ; Salmer, G.

  • Author_Institution
    CENTRE HYPERFREQUENCES & SEMICONDUCTEURS - E.R.A. au C.N.R.S. n° 454 Université de LILLE I BP 36 59650 VILLENEUVE D´´ASCQ France.
  • fYear
    1976
  • fDate
    14-17 Sept. 1976
  • Firstpage
    525
  • Lastpage
    529
  • Abstract
    High and moderate power Ka-Band (33-40 GHz) Impatt diode amplifiers for use especially in telecommunication systems have been investigated. We point out the means of obtaining optimal conditions (for SDR or DDR diode parameters and operating conditions) for the principal amplifier characteristics : gain-bandwidth product, output power levels, group delay variations, AM-PM conversion rates. The theoretical results achieved, corroborated by the experimental ones, show the excellent behaviour of these Impatt amplifiers operating in telecommunication systems.
  • Keywords
    Bandwidth; Circuit stability; Coaxial components; Current density; Delay; Frequency; High power amplifiers; Power amplifiers; Power generation; Semiconductor diodes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1976. 6th European
  • Conference_Location
    Rome, Italy
  • Type

    conf

  • DOI
    10.1109/EUMA.1976.332330
  • Filename
    4130996
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1968785