DocumentCode
1969010
Title
Computer-Aided Design of Microstrip GaAs Mesfet Amplifiers
Author
Nielsen, O.
Author_Institution
Electromagnetics Institute, Technical University of Denmark. DK-2800, Lyngby, Denmark.
fYear
1976
fDate
14-17 Sept. 1976
Firstpage
596
Lastpage
600
Abstract
Results on computer-aided design of broadband GaAs MESFET amplifiers in microstrip is presented. The analysis of an amplifier is based on measured scattering parameters and a model of the microstrip structure, which includes parasitics and junction effects. The optimized performance of one stage amplifiers with lossless distributed matching elements is presented. Realized amplifiers are in good agreement with the theory. One stage amplifiers with a 1 ¿m FET in chip form exhibit 5.8 dB of gain in the range 8-12 GHz, while a gain of 4.5 dB from 4-8 GHz has been obtained with a packaged 1 ¿m FET.
Keywords
Broadband amplifiers; Design automation; FETs; Gain; Gallium arsenide; MESFETs; Microstrip; Performance loss; Scattering parameters; Semiconductor device measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1976. 6th European
Conference_Location
Rome, Italy
Type
conf
DOI
10.1109/EUMA.1976.332343
Filename
4131009
Link To Document