High Conversion Efficiency Frequency Multiplier Using GaAs Avalanche Diodes

GaAs avalanche diodes for multiplication have been studied from 3 different points of view: theoretical, technological and circuit design, in order to obtain high efficiencies in the mm waveband. The GaAs diode design is explained and compared to that of Si diodes. The technology is then described and the importance of the idler impedances at the second and third harmonics is stressed. The best results are presented : conversion loss of 6 dB with 400 mW at 4 GHz to 100 mW at 32 GHz with 1.5 W D.C. power applied. Finally, the experimental results are compared to those predicted by a computer simulation, of the diodes impedances which were measured either by a substition method or by a new technique (1).