DocumentCode
1969328
Title
Impact of selective process bias (SPB) of interconnects on circuit delay
Author
Kulkarni, Mak ; Nagaraj, N.S. ; Marshall, Andrew ; Le, Viet
Author_Institution
Texas Instrum. Inc., Dallas, TX, USA
fYear
2004
fDate
27 Sept. 2004
Firstpage
155
Lastpage
158
Abstract
Interconnect parasitics are playing an increasingly important role in circuit performance as we move into the nanometer era of semiconductor technology. Hence accounting for interconnect process effects such as selective process bias (SPB) is becoming important for accurate circuit performance simulations. In this paper, the impact of SPB on circuit delay is demonstrated by studying its effect on capacitance, resistance, ring oscillator speed, and delay of commonly used ASIC cells. Simulations with and without SPB and comparison to measurements of ring oscillator structures in 90 nm process technology show how accounting for SPB increases the accuracy in prediction of ring oscillator speed.
Keywords
application specific integrated circuits; capacitance; circuit simulation; delays; electric resistance; integrated circuit interconnections; integrated circuit testing; oscillators; 90 nm; ASIC cells; capacitance; circuit delay; circuit performance simulations; interconnect parasitics; interconnect process effects; resistance; ring oscillator speed; ring oscillator structures; selective process bias; semiconductor technology; Application specific integrated circuits; Capacitance; Delay effects; Integrated circuit interconnections; Integrated circuit testing; Oscillators; Resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Implementation of High Performance Circuits, 2004. (DCAS-04). Proceedings of the 2004 IEEE Dallas/CAS Workshop
Print_ISBN
0-7803-8713-9
Type
conf
DOI
10.1109/DCAS.2004.1360449
Filename
1360449
Link To Document