Title :
Recent fully differential amplifier in 0.35 μm SiGe BiCMOS technology for UWB applications
Author :
Liptaj, Martin ; Galajda, Pavol ; Kmec, Martin
Author_Institution :
Dept. of Electron. & Multimedia Commun., Tech. Univ. of Kosice, Kosice, Slovakia
Abstract :
The paper deals with the recent developments of a differential amplifier designed in 0.35 μm SiGe BiCMOS technology from Austriamicrosystems, Austria (AMS). The amplifier is a part of the manufactured chip, which also contains a pair of low noise amplifiers and digital frequency divider. The manufactured chip will be a part of the set of ASIC circuits designed for implementation in the recent UWB radar system architectures.
Keywords :
BiCMOS integrated circuits; application specific integrated circuits; differential amplifiers; frequency dividers; low noise amplifiers; ultra wideband radar; ASIC circuits; BiCMOS technology; UWB application; UWB radar system architecture; differential amplifier; digital frequency divider; low noise amplifiers; BiCMOS integrated circuits; Current measurement; Gain; Metals; Semiconductor device measurement; Silicon germanium; Transistors; ASIC; SiGe BiCMOS; UWB (Ultra-Wideband); differential amplifier;
Conference_Titel :
Radioelektronika (RADIOELEKTRONIKA), 2011 21st International Conference
Conference_Location :
Brno
Print_ISBN :
978-1-61284-325-4
DOI :
10.1109/RADIOELEK.2011.5936454
