Recent fully differential amplifier in 0.35 μm SiGe BiCMOS technology for UWB applications

Author

Liptaj, Martin ; Galajda, Pavol ; Kmec, Martin

Author_Institution

Dept. of Electron. & Multimedia Commun., Tech. Univ. of Kosice, Kosice, Slovakia

fYear

2011

fDate

19-20 April 2011

Firstpage

1

Lastpage

4

Abstract

The paper deals with the recent developments of a differential amplifier designed in 0.35 μm SiGe BiCMOS technology from Austriamicrosystems, Austria (AMS). The amplifier is a part of the manufactured chip, which also contains a pair of low noise amplifiers and digital frequency divider. The manufactured chip will be a part of the set of ASIC circuits designed for implementation in the recent UWB radar system architectures.

Keywords

BiCMOS integrated circuits; application specific integrated circuits; differential amplifiers; frequency dividers; low noise amplifiers; ultra wideband radar; ASIC circuits; BiCMOS technology; UWB application; UWB radar system architecture; differential amplifier; digital frequency divider; low noise amplifiers; BiCMOS integrated circuits; Current measurement; Gain; Metals; Semiconductor device measurement; Silicon germanium; Transistors; ASIC; SiGe BiCMOS; UWB (Ultra-Wideband); differential amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Radioelektronika (RADIOELEKTRONIKA), 2011 21st International Conference

Conference_Location

Brno

Print_ISBN

978-1-61284-325-4

Type

conf

DOI

10.1109/RADIOELEK.2011.5936454

Filename

5936454