Room temperature Nb/Nb oxide-based single-electron transistors

Author

Shirakashi, J.-I. ; Matsumoto, K. ; Miura, N. ; Konagai, M.

Author_Institution

Electrotech. Lab., Tokyo Inst. of Technol., Japan

fYear

1997

fDate

10-10 Dec. 1997

Firstpage

175

Lastpage

178

Abstract

Room temperature operation of Nb/Nb oxide-based single-electron transistors (SETs) was successfully achieved and is reported in detail. First, the SETs were fabricated by a scanning probe microscope (SPM)-based anodic oxidation technique, and then the junction area was further reduced by thermal oxidation. Ultra-small tunnel junctions were easily obtained by utilizing these two kinds of oxidation processes, and clear single-electron charging effects were observed through the Nb/Nb oxide-based SETs at room temperature.

Keywords

MIM devices; niobium; niobium compounds; oxidation; quantum interference devices; single electron transistors; tunnel transistors; 298 K; Coulomb blockade; MIM devices; Nb-NbO; anodic oxidation technique; junction area; room temperature operation; scanning probe microscope; single-electron charging effects; single-electron transistors; thermal oxidation; tunnel junction devices; ultra-small tunnel junctions; Atomic force microscopy; Fabrication; Lithography; Niobium; Optical films; Oxidation; Scanning probe microscopy; Single electron transistors; Temperature; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-4100-7

Type

conf

DOI

10.1109/IEDM.1997.650302

Filename

650302