Epitaxial growth and characterization of ZnTe thin films for terahertz devices

Author

Guo, Qixin

Author_Institution

Dept. of Electr. & Electron. Eng., Saga Univ., Saga, Japan

fYear

2009

fDate

30-3 Aug. 2009

Firstpage

1

Lastpage

2

Abstract

ZnTe layers were grown on sapphire substrates by metalorganic vapor phase epitaxy. The PL spectrum for the ZnTe grown at 420degC was dominated by a sharp excitonic emission at 2.375 eV associated with shallow acceptors while only Y line around 2.16 eV due to extended structural defects was observed for the ZnTe layer grown at 390degC. The surface roughness of the ZnTe layers increased linearly with layer thickness, which is ascribed to the three-dimensional growth mechanism.

Keywords

II-VI semiconductors; MOCVD; excitons; photoluminescence; semiconductor epitaxial layers; semiconductor growth; surface roughness; terahertz wave devices; wide band gap semiconductors; zinc compounds; Al₂O₃; ZnTe; ZnTe thin films; electron volt energy 2.16 eV; electron volt energy 2.375 eV; epitaxial growth; excitonic emission; metalorganic vapor phase epitaxy; photoluminescence spectrum; sapphire substrates; shallow acceptors; surface roughness; temperature 390 degC; temperature 420 degC; terahertz devices; three-dimensional growth; Crystals; Epitaxial growth; Optical surface waves; Rough surfaces; Submillimeter wave devices; Substrates; Surface roughness; Temperature; Thin film devices; Zinc compounds; MOVPE; ZnTe; optical properties; surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-3829-7

Electronic_ISBN

978-1-4244-3830-3

Type

conf

DOI

10.1109/CLEOPR.2009.5292104

Filename

5292104