Title :
The preferential nucleation sites of self-assembled quantum dots with the influence of interfacial dislocation network
Author :
Zhou, Shuai ; Liu, Yu-Min ; Yu, Zhong-Yuan
Author_Institution :
Key Lab. of Inf. Photonics & Opt. Communtications, Beijing Univ. of Posts & Telecommun., Beijing, China
Abstract :
By considering a theoretical computation model, the strain field and elastic stored energy due to an interfacial misfit dislocation network near the free surface have been calculated analytically. The result predicted the preferential nucleation sites of self-assembled quantum dots with the influence of interfacial dislocation network. Compared with Green function method, our solution is simple, direct and can solve the problem completely.
Keywords :
Ge-Si alloys; dislocation nucleation; elasticity; elemental semiconductors; self-assembly; semiconductor quantum dots; silicon; SiGe-Si; elastic stored energy; free surface; interfacial misfit dislocation network; preferential nucleation sites; self-assembled quantum dots; strain field; Buffer layers; Computational modeling; Quantum dots; Self-assembly; Silicon germanium; Strain; Stress;
Conference_Titel :
Communications and Photonics Conference and Exhibition (ACP), 2010 Asia
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-7111-9
DOI :
10.1109/ACP.2010.5682638
