Modelling of the effects of conduction band fluctuations caused by nitrogen clustering in GaInNAs materials

This paper focuses in modelling of inhomogeneous broadening of GaInAs quantum dots based on Sugawara model which treats an idealized quantum dot with confined level coupled with wetting layer level. Model is derived by solving set of rate equations which includes the inhomogeneous distribution of electrons, multimode photon density, material grain and temperature dependence. The device is pumped with an electrical current injection.The corresponding output remains minimal until the carrier concentration in QD states reaches threshold and increases rapidly which reduces carrier density and carrier density rises again through carriers recovery from current injection. The cycles repeats itself until steady state is achieved.