Title :
Design and Performance of Low Noise C -and X - Band GaAs FET Mixers
Author :
Loriou, B. ; Leost, J.C.
Author_Institution :
Microwave Laboratory, I.C.S. Department, CNET - 22301, LANNION, FRANCE
Abstract :
Different configurations of MESFET mixers are compared in the 6 GHz band for intermediate frequencies ranging from 30 MHz to 1.5 GHz. Conversion gain of 10 dB associated with 4 dB SSB noise figure have been achieved. Results will be presented concerning a balanced module made up of two such mixers, image termination effect, cooling and the influence of 1/f noise. At 12 GHz, preliminary results obtained are 3.5 dB conversion gain and a 7.5 dB SSB noise figure.
Keywords :
Amplitude modulation; Cooling; FETs; Frequency; Gain; Gallium arsenide; Image converters; MESFETs; Mixers; Noise figure;
Conference_Titel :
Microwave Conference, 1977. 7th European
Conference_Location :
Copenhagen, Denmark
DOI :
10.1109/EUMA.1977.332409
