First observation of anomalously large blueshift of apparent donor-acceptor pair transition peak in compensation-doped quantum wells

Author

Ding, Yujie J. ; Korotkov, R.Y. ; Khurgin, Jacob B. ; Rabinovich, W.S. ; Katzer, D. Scott

Author_Institution

Dept. of Phys. & Astron., Bowling Green State Univ., OH, USA

fYear

1998

fDate

8-8 May 1998

Firstpage

188

Abstract

Summary form only given.Previously, in undoped and doped bulk GaAs with donor and acceptor densities, the maximum amount of blueshift of the donor-acceptor pair (DAP) transition peak observed is only -3 meV. For the first time, to the best of our knowledge, we have observed anomalously large blueshift of the DAP transition peak (-11 meV) in compensation-doped asymmetric-coupled quantum wells (QWs). Our sample was grown by MBE on a semi-insulating GaAs substrate. The epitaxial layers consist of 20 periods, each of which is composed of two GaAs QWs, respectively, coupled by a Al/sub 0.53/Ga/sub 0.47/As barrier.

Keywords

III-V semiconductors; compensation; gallium arsenide; molecular beam epitaxial growth; semiconductor doping; semiconductor quantum wells; spectral line shift; Al/sub 0.53/Ga/sub 0.47/As; Al/sub 0.53/Ga/sub 0.47/As barrier; DAP transition; GaAs; MBE growth; anomalously large blueshift; compensation-doped asymmetric-coupled quantum wells; compensation-doped quantum wells; donor-acceptor pair transition peak; epitaxial layers; semi-insulating GaAs substrate; Digital audio players; Gallium arsenide; Laser beams; Laser excitation; Laser modes; Laser theory; Laser transitions; Optimized production technology; Physics; Solitons;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics Conference, 1998. IQEC 98. Technical Digest. Summaries of papers presented at the International

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-541-2

Type

conf

DOI

10.1109/IQEC.1998.680386

Filename

680386