• DocumentCode
    1970025
  • Title

    Beyond the Conventional MOSFET

  • Author

    Wong, H. S Philip

  • Author_Institution
    IBM T. J. Watson Research Center, USA
  • fYear
    2001
  • fDate
    11-13 September 2001
  • Firstpage
    69
  • Lastpage
    72
  • Keywords
    CMOS technology; Dielectric materials; Double-gate FETs; Germanium silicon alloys; High K dielectric materials; Inorganic materials; MOSFET circuits; Nanoscale devices; Semiconductor materials; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2001. Proceeding of the 31st European
  • Print_ISBN
    2-914601-01-8
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2001.195206
  • Filename
    1506588
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1970025