Title :
Beyond the Conventional MOSFET
Author :
Wong, H. S Philip
Author_Institution :
IBM T. J. Watson Research Center, USA
fDate :
11-13 September 2001
Keywords :
CMOS technology; Dielectric materials; Double-gate FETs; Germanium silicon alloys; High K dielectric materials; Inorganic materials; MOSFET circuits; Nanoscale devices; Semiconductor materials; Silicon germanium;
Conference_Titel :
Solid-State Device Research Conference, 2001. Proceeding of the 31st European
Print_ISBN :
2-914601-01-8
DOI :
10.1109/ESSDERC.2001.195206
