Spin relaxation in undoped GaAs quantum wells

Author

Britton, R.S. ; Malinowski, A. ; Harley, R.T.

Author_Institution

Dept. of Phys., Southampton Univ., UK

fYear

1998

fDate

8-8 May 1998

Firstpage

191

Lastpage

192

Abstract

Summary form only given.We describe comprehensive measurements of spin relaxation in undoped MBE GaAs-Al/sub 0.35/Ga/sub 0.65/As quantum wells at room temperature and down to 10 K. Samples from several sources have been investigated and are compared with results from other workers. We used a pump-probe quasi-normal-incidence reflection technique based on a ps mode-locked Ti:sapphire laser. The pump and delayed weak probe beams were tuned to the n=1 heavy-hole exciton feature in each sample and were circularly and linearly polarized, respectively.

Keywords

III-V semiconductors; gallium arsenide; high-speed optical techniques; molecular beam epitaxial growth; optical pumping; optical tuning; semiconductor quantum wells; spin; 300 to 10 K; GaAs-Al/sub 0.35/Ga/sub 0.65/As; circularly polarized; comprehensive measurements; delayed weak probe beams; heavy-hole exciton feature; linearly polarized; optical tuning; ps mode-locked Ti:sapphire laser; pump beams; pump-probe quasi-normal-incidence reflection technique; room temperature; spin relaxation; undoped GaAs quantum wells; undoped MBE GaAs-Al/sub 0.35/Ga/sub 0.65/As quantum wells; Delay; Gallium arsenide; Laser excitation; Laser mode locking; Laser tuning; Optical reflection; Probes; Pump lasers; Quantum well lasers; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics Conference, 1998. IQEC 98. Technical Digest. Summaries of papers presented at the International

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-541-2

Type

conf

DOI

10.1109/IQEC.1998.680391

Filename

680391