Title :
Electron distribution in bidimensional nonparabolic subbands under high-intensity excitation
Author :
Vodopyanov, K.L. ; Serapiglia, G.B. ; Phillips, C.C. ; Sirtori, C.
Author_Institution :
Dept. of Phys., Imperial Coll. of Sci., Technol. & Med., London, UK
Abstract :
Summary form only given. Electron distribution among subbands in semiconductor quantum wells (QWs) has become of great interest since the demonstration of population inversion and lasing action in the quantum cascade laser. We applied two color mid-IR picosecond pump-probe spectroscopy for the study of electron dynamics in a QW three-level structure. Our samples, grown by molecular-beam epitaxy on a semi-insulating InP substrate, consist of 40 10-nm-thick GaInAs wells separated by 10 undoped AlInAs barriers.
Keywords :
III-V semiconductors; electron mobility; gallium arsenide; high-speed optical techniques; indium compounds; infrared spectra; optical pumping; semiconductor quantum wells; 10 nm; AlInAs; GaInAs; GaInAs wells; InP; QW three-level structure; bidimensional nonparabolic subbands; electron distribution; electron dynamics; high-intensity excitation; lasing action; molecular-beam epitaxy; population inversion; quantum cascade laser; semi-insulating InP substrate; semiconductor quantum wells; two color mid-IR picosecond pump-probe spectroscopy; undoped AlInAs barriers; Absorption; Bleaching; Brillouin scattering; Electrons; Laser excitation; Optical pulse generation; Optical scattering; Quantum cascade lasers; Temperature; Tunable circuits and devices;
Conference_Titel :
Quantum Electronics Conference, 1998. IQEC 98. Technical Digest. Summaries of papers presented at the International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-541-2
DOI :
10.1109/IQEC.1998.680392
